کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1521727 | 1511814 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spatial and RF power dependence of the structural and electrical characteristics of copper zinc tin selenide thin films prepared by single elementary target sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The spatial variations of the structural, optical and electrical properties of Cu2ZnSnSe4 thin films grown by radio-frequency (RF) magnetron sputtering across a distance of 60Â mm were investigated as a function of the discharge power. Noticeable changes in the deposition rate and elemental distribution were observed in the as-deposited films at the central and near-edge regions. After annealing in a Se atmosphere, the dependence of the phase evolution and electrical properties on the spatial position and power was also evident. Deposition at a low power of 30Â W seems to be more promising in generating dominant Cu2ZnSnSe4 phase with well-packed crystallites on the surface. On the other hand, deposition at higher power tended to result in a significant portion of a secondary SnSe2 phase, which is responsible for the higher optical band gap and lower electrical resistivity, depending on the specific region of the film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 148, Issues 1â2, 14 November 2014, Pages 175-180
Journal: Materials Chemistry and Physics - Volume 148, Issues 1â2, 14 November 2014, Pages 175-180
نویسندگان
Yeon Hwa Jo, Jin Woo Jang, Yong Soo Cho,