کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1521733 1511814 2014 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First-principles investigation of negative thermal expansion in II-VI semiconductors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
First-principles investigation of negative thermal expansion in II-VI semiconductors
چکیده انگلیسی
Within the framework of first-principles, all II-VI semiconductors with cubic zinc blende structure have negative thermal expansion (NTE) behavior at low temperatures. Negative mode Grüneisen parameters are found for two transverse acoustic (TA) branches near the Brillouin-zone boundaries. Through the analysis of vibrational modes, it shows that the librational mode which brings about the bond tension effect by atomic motions perpendicular to the bonds can contribute to the NTE. Related thermodynamic properties of II-VI semiconductors have also been studied. It is demonstrated that with increased ionic radius and atomic mass, the variety of electronegativity can cause more covalent character in bonding nature, weaker interatomic force constants and lower frequencies in lattice vibrations. Thus, despite the same vibrational modes, II-VI semiconductors can present different NTE behavior and thermodynamic properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 148, Issues 1–2, 14 November 2014, Pages 214-222
نویسندگان
, , , , , , ,