Strong red emission and electrical properties of highly c-axis oriented Eu3+-doped bismuth vanadate ferroelectric thin films

• c-axis oriented Bi2−xEuxVO5.5 films were prepared by chemical solution deposition.
• The thin films show bright red emission.
• Eu3+-doping leads to weakened dielectric dispersion and decreased dielectric loss.
• The thin films have potential applications in luminescent ferroelectric devices.

Highly c-axis oriented Bi2−xEuxVO5.5 (x = 0, 0.05, 0.10, 0.15, and 0.20) thin films were prepared on Pt(111)/Ti/SiO2/Si and fused silica substrates by using chemical solution deposition method, and characterized by X-ray diffraction, scanning electron microscopy, and optical and electrical measurements. Under 356 nm UV irradiation, a bright red photoluminescence can be observed in the thin films with x = 0.10, 0.15, and 0.20. The emission spectra included two strong peaks which originated from 5D0 → 7F1 (595 nm) and 5D0 → 7F2 (619 nm) transitions of Eu3+ ions. With increasing Eu3+-doping content x, the dielectric dispersion weakened, and dielectric loss decreased. Eu3+ doping can also decrease the leakage current of the thin films. These results demonstrate that Bi2−xEuxVO5.5 thin films are a kind of multifunctional material with potential applications in luminescent ferroelectric devices.

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