کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1522282 | 995307 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb) Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)](/preview/png/1522282.png)
چکیده انگلیسی
In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J-V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 143, Issue 3, 14 February 2014, Pages 1536-1539
Journal: Materials Chemistry and Physics - Volume 143, Issue 3, 14 February 2014, Pages 1536-1539
نویسندگان
Jeong-Hun Shin, Hyun-Wook Jung, Woo-Shik Jung, Jin-Hong Park,