کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1522379 | 995309 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of doping concentration on the microstructural and optoelectrical properties of boron doped amorphous and nanocrystalline silicon films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Boron doped hydrogenated amorphous silicon thin films were prepared by plasma-enhanced chemical vapor deposition technique at various flow rate of diborane (FB). As-deposited samples were thermally annealed at the temperature of 800 °C to obtain the doped nanocrystalline silicon (nc-Si) films. The effect of boron concentration on the microstructural, optical and electrical properties of the films was investigated. X-ray photoelectron spectroscopy (XPS) measurements demonstrated the presence of the substitutional boron in the doped films. It was found that thermal annealing can efficiently activate the dopants in films accompanying with formation of nc-Si grains. Based on the temperature-dependent conductivity measurements, it was shown that the dark conductivity of doped amorphous samples increases monotonously with the increase of doping content. While the dark conductivity of doped nc-Si films is not only determined by the concentration of dopant but also the crystallinity of the films. As increasing the flow rate of diborane, the crystallinity of doped nc-Si films decreases, which causes the decrease of dark conductivity. Finally, the high dark conductivity of 178.68 S cmâ1 of the B-doped nc-Si thin films can be obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 142, Issue 1, 15 October 2013, Pages 292-296
Journal: Materials Chemistry and Physics - Volume 142, Issue 1, 15 October 2013, Pages 292-296
نویسندگان
Chao Song, Xiang Wang, Rui Huang, Jie Song, Yanqing Guo,