Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

• Nonvolatile rewritable memory effect in P3HT–graphene composite is demonstrated.
• The memory device was fabricated through a simple solution processing technique.
• The device shows a remarkable electrical bistable behavior and excellent stability.
• Memory mechanism is deduced from the modeling of the currents in both states.

An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5 V and an ON/OFF-state current ratio of 105. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1 V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets.

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