Structure and improved electrical properties of Pr-doped PbZrO3 antiferroelectric thin films with (111) preferential orientation

► Pr-doped PbZrO3 antiferroelectric films prepared by chemical solution deposition. ► The Pr-doped thin films exhibit strong (111) orientation. ► Pr-doping results in large polarization and high energy storage density. ► Occupying site of Pr ions and high orientation play an important role.