Electrochemical isotropic texturing of mc-Si wafers in KOH solution

► A method to form isotropic textures on mc-Si wafers in KOH solution is presented. ► The method is based on anodic polarization of silicon in KOH at high potentials. ► Evolution of surface morphology is studied by varying the etch parameters. ► Isotropic textures with lowest average reflectivity are obtained at 40 V. ► A reaction model for texturing mechanism is discussed in the light of XPS data.