Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

► InGaN materials grown by different alkyl source using metalorganic chemical vapor deposition.
► Ga-doped ZnO films deposited by radio frequency magnetron sputtering to feature Schottky contacts onto InGaN.
► In-situ capping technique improves performance of InGaN photosensors.