کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1523142 1511825 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photovoltaic, photoelectric and optical spectra of novel AgxGaxGe1−xSe2 (0.167 ≤ x ≤ 0.333) quaternary single crystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Photovoltaic, photoelectric and optical spectra of novel AgxGaxGe1−xSe2 (0.167 ≤ x ≤ 0.333) quaternary single crystals
چکیده انگلیسی

In this paper, we report on the photovoltaic, photoelectric and optical properties of AgxGaxGe1−xSe2 single crystals (x = 0.333; 0.25; 0.20; 0.167). Investigation of optical and photoelectric parameters of AgxGaxGe1−xSe2 samples was carried out at different temperatures in the range 77–300 K. A large energy band gap (2.15–2.23 eV) for different values of x at T = 300 K and p-type conductivity make the titled AgxGa1−xGe1+xSe6 crystals as promising materials for substrates in heterojunctions based on wide-binary chalcogenide semiconductors A2V6 (their analogies), which have n-type conductivity. For the fabricated crystals, comparison of the thermoelectric conductivity measurements is performed. Role of intrinsic defects is also discussed.


► Single crystals of quaternary chalcogenide compounds AgxGa1−xGe2+xSe6 (x = 0.333; 0.25; 0.20; 0.167) were synthesized.
► Photovoltaic, photoelectric and optical properties were studied.
► Comparison of the thermoelectric conductivity measurements is performed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 135, Issues 2–3, 15 August 2012, Pages 837–841
نویسندگان
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