کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1523142 | 1511825 | 2012 | 5 صفحه PDF | دانلود رایگان |

In this paper, we report on the photovoltaic, photoelectric and optical properties of AgxGaxGe1−xSe2 single crystals (x = 0.333; 0.25; 0.20; 0.167). Investigation of optical and photoelectric parameters of AgxGaxGe1−xSe2 samples was carried out at different temperatures in the range 77–300 K. A large energy band gap (2.15–2.23 eV) for different values of x at T = 300 K and p-type conductivity make the titled AgxGa1−xGe1+xSe6 crystals as promising materials for substrates in heterojunctions based on wide-binary chalcogenide semiconductors A2V6 (their analogies), which have n-type conductivity. For the fabricated crystals, comparison of the thermoelectric conductivity measurements is performed. Role of intrinsic defects is also discussed.
► Single crystals of quaternary chalcogenide compounds AgxGa1−xGe2+xSe6 (x = 0.333; 0.25; 0.20; 0.167) were synthesized.
► Photovoltaic, photoelectric and optical properties were studied.
► Comparison of the thermoelectric conductivity measurements is performed.
Journal: Materials Chemistry and Physics - Volume 135, Issues 2–3, 15 August 2012, Pages 837–841