Resistance–temperature relation and atom cluster estimation of In–Bi system melts

A testing device for the resistivity of high-temperature melt was adopted to measure the l resistivity of In–Bi system melts at different temperatures. It can be concluded from the analysis and calculation of the experimental results that the resistivity of InxBi100−x (x = 0–100) melt is in linear relationship with temperature within the experiment temperature range. The resistivity of the melt decreases with the increasing content of In. The fair consistency of resistivity of In–Bi system melt is found in the heating and cooling processes. On the basis of Novakovic's assumption, we approximately estimated the content of InBi atom clusters in InxBi100−x melts with the resistivity data by equation ρ ≈ ρInBixInBi + ρm(1 − xInBi). In the whole components interval, the content corresponds well with the mole fraction of InBi clusters calculated by Novakovic in the thermodynamic approach. The mole fraction of InBi type atom clusters in the melts reaches the maximum at the point of stoichiometric composition In50Bi50.

► A testing device was adopted to measure the electrical resistivity of In–Bi system melts.
► A basically linear relation exists between the resistivity and temperature of InxBi100−x melts in measured temperature range.
► Based on Novakovic's assumption, the content of InBi atomic cluster in InxBi100−x melt is estimated with ρ ≈ ρInBixInBi + ρm(1 − xInBi) equation.