کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1523268 1511827 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Role of surface stoichiometry on the interfacial electron behavior at Ni/TiO2(0 0 1) interfaces
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Role of surface stoichiometry on the interfacial electron behavior at Ni/TiO2(0 0 1) interfaces
چکیده انگلیسی

The interfacial properties of Ni clusters grown on the stoichiometric and reduced rutile TiO2(0 0 1) surfaces were investigated by means of X-ray photoelectron spectroscopy (XPS). The binding energies (BE's) of elements from both overlayers and substrates were found to be affected by the formation of interfacial dipole. Regardless of the TiO2 surface stoichiometry, the Ni 2p3/2 BE's move monotonically toward lower value with the increase of Ni thickness due to the cluster size effect. However, the Ni 2p3/2 BE shift is much smaller on reduced TiO2(0 0 1) surfaces compared to that on the annealed stoichiometric surface. For stoichiometric and lightly reduced TiO2 surfaces, O 1s BE's exhibit an unexpected upward shift with increasing Ni thickness below 2 Å, and then downward shift to lower BE's when the Ni thickness increases further. This opposite tendency is attributed to the insulator-to-metal transition. On heavily reduced surface, only monotonically downward shift of the O 1s BE's was observed with the increase of Ni thickness. The different behaviors are well elucidated by collective contributions of interfacial charge transfer and image charge effect.


► Surface stoichiometry affects the interfacial charge re-distribution.
► Separation of electron–hole pairs depends on surface stoichiometry.
► Oxidization state of Ni depends on the initial conditions of the TiO2 surface.
► Insulator-to-metal transition affects the binding energies.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 133, Issues 2–3, 16 April 2012, Pages 871–875
نویسندگان
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