An investigation of the electrical transport properties of graphene-oxide thin films

The electrical transport properties of graphene-oxide (GO) thin films were investigated. The GO was synthesized by a modified Hummers method and was characterized by X-ray diffraction and UV–visible spectroscopy. The thin film of GO was made on a Si/SiO2 substrate by drop-casting. The surface morphology of the GO film was analyzed by using scanning electron microscopy and atomic force microscopy techniques. Temperature dependent resistance and current–voltage measurements were studied using four-terminal method at various temperatures (120, 150, 175, 200, 250 and 300 K) and their charge transport followed the 3D variable range hopping mechanism which was well supported by Raman spectra analysis. The presence of various functional groups in GO were identified by using high resolution X-ray photo electron (XPS) and Fourier transform infra red (FT-IR) spectroscopic techniques. Graphene-oxide thin film field effect transistor devices show p-type semiconducting behavior with a hole mobility of 0.25 cm2 V−1 s−1 and 0.59 cm2 V−1 s−1 when measured in air and vacuum respectively.

► Four terminal electrical transport characterization of graphene-oxide thin film.
► Low temperature R–T and I–V studies on GO thin film.
► Electrical transport obeys VRH mechanism supported by Raman spectra.
► GO characterizations by SEM, AFM, UV–vis, XRD, FTIR and XPS.
► GO-FET confirms the p-type semiconducting behavior.