کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1523417 | 995324 | 2012 | 6 صفحه PDF | دانلود رایگان |
ZnO films were prepared by atomic layer deposition upon a SiO2 layer on a Si substrate and treated by rapid thermal annealing. The optically-pumped random lasing actions with low threshold values were observed in the ZnO films on SiO2/Si substrates. With the decrease in ZnO film thickness or the increase in post-annealing duration, the stimulated emission shifted toward the shorter wavelength and the lasing threshold increased. The results can be attributed to the inter-diffusion between ZnO and SiO2, which causes the modification of bandgap renormalization in ZnO.
► The stimulated emission in the polycrystalline ZnO films deposited by atomic layer deposition on SiO2/Si substrate.
► This study provides a method to fabricate tunable ZnO lasing devices on the cheap SiO2/Si substrates.
► The low-threshold stimulated emission in ZnO films was achieved.
► The stimulated emission shifted toward the shorter wavelength and the lasing threshold increased.
Journal: Materials Chemistry and Physics - Volume 135, Issue 1, 16 July 2012, Pages 88–93