Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN

► Annealing effects on the electrical and structural properties of Ru/Pd/n-GaN SBDs are studied. ► The optimum annealing temperature for Pd/Ru Schottky contact is 300 °C. ► Increase in SBH upon annealing at 300 °C could be attributed to the formation of gallide phases. ► The overall surface morphology of the Pd/Ru Schottky contacts on n-GaN is fairly smooth.