Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

Photo induced changes in amorphous As20Se80/alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As20Se80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

► Amorphous chalcogenides were investigated in this work.
► Photo-induced effects were investigated in the created thin films.
► Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied.