کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1523638 | 1511828 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and current-induced effect on the resistivity of La2CoMnO6 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structure and current-induced effect on the resistivity of La2CoMnO6 thin films Structure and current-induced effect on the resistivity of La2CoMnO6 thin films](/preview/png/1523638.png)
چکیده انگلیسی
Polycrystalline double perovskite La2CoMnO6 thin films are successfully deposited on Si(1Â 0Â 0) substrates via chemical solution deposition method. Their structural, electrical and magnetic properties are measured. All films are single phase and polycrystalline with monoclinic structures. The temperature variation of resistivity of the thin films annealed at different temperatures shows that the resistivity decreases with the increase of crystalline quality. For the films annealed at 1073Â K, a typical dependence of resistivity on temperature under different currents displays that the resistivity decreases with the increased current. A magnetoresistivity of â¼25% is found at 40Â K in an applied field of 8Â kOe and MR has positive sign. Large negative current resistivity is observed close to room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 132, Issues 2â3, 15 February 2012, Pages 466-470
Journal: Materials Chemistry and Physics - Volume 132, Issues 2â3, 15 February 2012, Pages 466-470
نویسندگان
Yijing Gu, Yunfeng Wang, Tao Wang, Wangzhou Shi,