Micro Raman analysis of MOCVD grown gallium nitride epilayers irradiated with light and heavy ions

► Effects of light and heavy ion irradiation on the MOCVD grown GaN. ► Analysis using the micro Raman spectra of pristine and ions irradiated GaN. ► Deducing biaxial stress (σ), carrier concentration (n) and phonon life-time (τ) from the Raman shift.