Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

► Fluorine ion was implanted into the buffer oxide to form fluorine-silicate-glass (FSG). ► Ni-induced lateral crystallization (NILC) was used to fabricate poly-Si TFT on either oxide (NILC-TFT) or FSG (FSG-TFT). ► The performance of FSG-TFT was better than that of NILC-TFT.