کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1523707 | 995329 | 2013 | 4 صفحه PDF | دانلود رایگان |
Low power-driven oxide thin film transistor (TFT) with a high-k gate dielectric is fabricated by a simple solution process. Sol–gel derived Gd2O3 film exhibits the dielectric constant in the range of 9–14 with breakdown field as high as 3.5 MV cm−1. Zn–In–Sn–O based TFTs combined with a corresponding film demonstrate the readiness of solution processed high-k film as gate insulators. The resultant device exhibits the enhanced performance with the field-effect mobility of ∼1.9 cm2 V−1 s−1, which is improved by a factor of 4.5 comparing with the conventional TFT based on a SiO2 insulator, and the exceptionally low operating voltage of 6 V.
► Solution processed high-k Gd2O3 gate insulator for oxide thin film transistors (TFTs).
► Low voltage-operated TFTs with enhanced switching property can be obtained.
► Applicable to the promising electronic materials for printing-based TFTs.
Journal: Materials Chemistry and Physics - Volume 138, Issue 1, 15 February 2013, Pages 1–4