Electrical and dielectric properties of sol–gel derived mullite doped with transition metals

Highly crystallized mullite composite has been synthesized at 1000 °C and 1300 °C via sol–gel technique in the presence of transition metal ions such as cobalt, nickel and copper. The dielectric properties (dielectric constant, loss tangent and a.c. conductivity) of the composites have been measured at room temperature and their variation with increasing frequency and concentration of the doped metals has been investigated. The composite doped with nickel exhibits minimum dielectric constant of 3.15 at 0.002(M) concentration at a frequency of 1.5 MHz. Experimental data shows a linear increase in a.c. conductivity with increasing concentration of metal doping ions .The dielectric constant and loss tangent of the composites are within the range of requirements for commercial use in electronics.

► We have synthesized mullite composites with low dielectric constants.
► Packaging substrate industry requires a material with low dielectric constant.
► We think alumina can be replaced by the doped mullite.
► The signal transmission delay time will be less.
► The material we have synthesized is having dielectric constant of 3.15.