Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H-SiC in diluted N2O ambient

► Zr-oxynitride as the gate oxide deposited on 4H-SiC substrate. ► Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H-SiC using various concentrations of N2O gas. ► Presence of interfacial layer comprised of mixed compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N. ► The highest electrical breakdown and highest reliability at diluted N2O of 10%.