Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate

► Enhanced growth of periodic arrays of low-resistivity CoSi2 nanodots on (0 0 1)Si0.7Ge0.3 has been achieved by using a novel Co/amorphous-Si(a-Si) bilayer nanodot structure. ► The formation temperature of CoSi2 nanodots was significantly lowered by at least 300 °C compared to what is usually needed for the growth of blanket CoSi2 films on Si1−xGex substrates. ► The presence of the a-Si interlayer could effectively prevent Ge segregation and maintain the interface stability in forming CoSi2 nanodots on Si0.7Ge0.3 substrate.