کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1524623 | 995340 | 2011 | 9 صفحه PDF | دانلود رایگان |

In this work, a quantitative analysis of reported metallic and insulating behaviour of resistivity in perovskite manganites La0.8Sr0.2MnO3 is established. An effective inter-ionic interaction potential (EIoIP) with the long-range Coulomb, van der Waals (vdW) interaction and short-range repulsive interaction up to second-neighbour ions within the Hafemeister and Flygare approach was employed to estimate the Debye and Einstein temperature and was found to be consistent with the available experimental data. The electrical resistivity data in low temperature regime (T < TMI) were theoretically analyzed within the framework of the classical electron–phonon model of resistivity, for example, the Bloch–Gruneisen (BG) model. The Bloch–Gruneisen (BG) model and terms T2, T4.5 simplify the electron–phonon, electron–electron and electron–magnon scattering processes. On the other hand, in high temperature regime (T > TMI) the insulating nature is discussed with Mott's variable range hopping (VRH) model and small polaron conduction (SPC) model. For T > TMI SPC model is more appropriate than the VRH model. The SPC model consistently retraces the higher temperature resistivity behaviour (T > θD/2). The metallic and semiconducting resistivity behaviours of La0.8Sr0.2MnO3 manganites are analyzed, to the knowledge, for the first time highlighting the importance of electron–phonon, electron–electron, electron–magnon interactions and small polaron conduction.
► La1−xKxMnO3 manganites crystallize in rhombohedral structure (R3¯C).
► K doping at La site enhances metal–insulator transition.
► Metallic resistivity shows electron, magnon and phonon scattering are significant.
► Polaronic effects are the major proponents for semiconducting resistivity.
► Resistivity upturn contributes to Coulomb and Kondo-like scattering.
Journal: Materials Chemistry and Physics - Volume 129, Issue 3, 3 October 2011, Pages 896–904