Fabrication of p-type ZnO nanowires based heterojunction diode

Vertically aligned p-type ZnO (Li–N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm−1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm−1 for ZnO stretching mode. Compositional studies revealed the formation of Li–N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I–V and C–V characteristics. I–V characteristics exhibited the rectifying behavior of a typical p–n junction diode.