Field emission performance of SiC nanowires directly grown on graphite substrate

Lawn-like SiC nanowire arrays were successfully synthesized on graphite substrates by thermal evaporation of silicon powders at high temperature. The morphology, microstructure and composition of the nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The product grown on graphite substrates was hexagonal prism-shaped single-crystal 3C-SiC nanowires with high aspect ratio. Planar defects, such as microtwins and stacking faults were observed in SiC nanowires. Field emission measurements of the SiC nanowires grown on graphite substrate showed a very low threshold field of 2.1 V μm−1, high brightness and stable field emission performance.

Research highlights▶ A lawn-like SiC nanowire array was synthesized on graphite substrate. ▶ The nanowires are hexagonal prism-shaped 3C-SiC nanowires with high aspect ratio. ▶ SiC nanowires showed a low threshold field and stable field emission performance. ▶ The effective interfacial adhesion between graphite substrate and SiC nanowires.