کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1524955 995345 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impurity modulated excitation profile of doped quantum dot subject to oscillatory magnetic field
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Impurity modulated excitation profile of doped quantum dot subject to oscillatory magnetic field
چکیده انگلیسی

We explore the excitation profile of a repulsive impurity doped quantum dot under periodically fluctuating magnetic field. We have considered Gaussian impurity centers. The investigation reveals the roles subtly played by the dopant coordinate and the region of influence of the dopant to modulate the excitation pattern. The rate of transition to the excited states has been invoked to analyze the interplay between the above two impurity parameters in influencing the excitation process. The ratio of cyclotron frequency and harmonic confinement potential has important impact on excitation rate.

Figure optionsDownload as PowerPoint slideResearch highlights▶ The excitation profile of quantum dot subject to periodically fluctuating magnetic field has been investigated. ▶ The quantum dot is doped with a repulsive Gaussian impurity. ▶ The impurity domain and impurity location delicately modulate the excitation profile. ▶ The ratio of cyclotron frequency and harmonic confinement potential has important impact on excitation rate. ▶ The findings could have important engineering applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 126, Issue 3, 15 April 2011, Pages 693–699
نویسندگان
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