کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1524982 | 995345 | 2011 | 7 صفحه PDF | دانلود رایگان |

The passivity of titanium was studied using potentiostatic polarization combined with Mott–Schottky analysis in acidic solutions. The oxide layer was characterized as an n-type semiconducting, oxygen deficient oxide (TiO1.993–1.996) with a donor density in the range of 1019–1020 cm−3 depending on electrode potential and electrolyte pH. The calculated thickness for the inner oxide layer was in the range of 1–4 nm, increasing linearly with applied potential and exponentially with electrolyte pH. The potential- and pH-dependence of the inner oxide thickness was interpreted by a modified point defect model for the migration-controlled oxide growth, in which the rate-determining step in the passive film growth processes was assumed to be the donor lattice migration.
Research highlights▶ The oxide layer on titanium was characterized as an n-type semiconducor (TiO1.993–1.996). ▶ The film thickness was 1–4 nm, increasing linearly with potential and exponentially with pH. ▶ The Lss vs. E & pH is consistent with a modified PDM model for diffusion-controlled oxide growth.
Journal: Materials Chemistry and Physics - Volume 126, Issue 3, 15 April 2011, Pages 859–865