کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1525141 1511840 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
First-principles energy band calculation for CaBi2O4 with monoclinic structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
First-principles energy band calculation for CaBi2O4 with monoclinic structure
چکیده انگلیسی

The electronic structure of CaBi2O4 is calculated by a GGA approach. The valence band maximum is approximately located at the Γ-point or the Y-point and the conduction band minimum at the V-point. This means that CaBi2O4 is an indirect energy gap material. The conduction band is composed of Bi 6p–O 2p interaction. On the other hand, the valence band can be divided into two energy regions ranging from −9.92 to −7.40 eV (lower valence band) and −4.69 to 0 eV (upper valence band). The former is mainly constructed from Bi 6s states interacting slightly with O 2s and 2p states, and the latter consists of O 2p states hybridizing with Bi 6s and 6p states. The states near the valence band maximum are strongly localized and the mobility of holes generated by band gap excitation is predicted to be fairly low.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 121, Issues 1–2, 15 May 2010, Pages 385–389
نویسندگان
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