کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1525225 | 1511838 | 2010 | 5 صفحه PDF | دانلود رایگان |
A nonvolatile write-once-read-many-times (WORM) memory device based on poly((4-vinylbenzyl)-9H-carbazole) (PVCz) was fabricated by a simple and conventional process. The as-fabricated device was found to be at its OFF state and could be programmed irreversibly to the ON state with a low transition voltage of −1.7 V. The device exhibits a high ON/OFF current ratio of up to 106, high stability in retention time up to 8 h and number of read cycles up to 108 under a read voltage of −1.0 V in both ON and OFF states. The results of X-ray diffraction (XRD) and fluorescence emission spectra in different states of PVCz indicate that the electrical bistable phenomenon is caused by the voltage-induced conformation change of the pendant carbazole groups. With high performance, low power consumption and low production cost, the device fabricated with PVCz has a potential application for nonvolatile memory.
Journal: Materials Chemistry and Physics - Volume 123, Issues 2–3, 1 October 2010, Pages 685–689