کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1525664 995359 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and photoluminescence properties of silicon nanowires with thin surface oxide layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Fabrication and photoluminescence properties of silicon nanowires with thin surface oxide layers
چکیده انگلیسی

Si nanowires have been synthesized by a novel oxide-assistant growth mechanism using boron powder and silicon oxide as reactants. Their structures and morphologies have been investigated using X-ray diffraction, scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. The obtained nanowire consists of a single-crystalline Si core and a very thin amorphous boron oxide layer. Photoluminescence investigations reveal that the Si nanowires possess a broad red emission band. The outside amorphous oxide layer plays an important role for the luminescence. The study suggests that the Si nanowires can find potential applications in nanoscale electric and optoelectronic devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 118, Issue 1, 15 November 2009, Pages 125–128
نویسندگان
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