کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1525864 1511847 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis and properties of pure and antimony-doped tin dioxide thin films fabricated by sol–gel technique on silicon wafer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Synthesis and properties of pure and antimony-doped tin dioxide thin films fabricated by sol–gel technique on silicon wafer
چکیده انگلیسی

High-quality antimony-doped tin dioxide (SnO2:Sb) thin films with various concentrations of Sb have been prepared on Si (1 1 1) wafer by sol–gel technique. The microstructure, surface morphology, composition and optical properties of the films are characterized using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that the films are the dominant orientation of (1 0 1) with rutile structure of SnO2, Sb dopant causes the peak positions in XRD patterns to shift slightly instead of introducing new phases, and the average grain size of the films is about 26 nm. Optical constant, refraction index n from 1.55 to 1.95 in the visible spectral region, was determined through multilayer analyses on their respective pseudo-dielectric functions. It is also found that the optical constants depend strongly on the layers of films, annealing temperature and the concentration of Sb dopant.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 114, Issues 2–3, 15 April 2009, Pages 854–859
نویسندگان
, , , ,