کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1526380 | 995370 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Semiconductivities of Sn-doped In2O3 powder prepared by co-precipitation through ion exchange method Semiconductivities of Sn-doped In2O3 powder prepared by co-precipitation through ion exchange method](/preview/png/1526380.png)
Sn-doped In2O3 (ITO) powder was prepared by co-precipitation through ion exchange method with the solution of InCl3 and SnCl4·5H2O under the condition of the different temperatures and different molar ratios of Sn to In. ITO precursor was analyzed by TG-DTA, and the morphology, phase composition and particle size of the powder were characterized by TEM and XRD. The effects of calcination temperature and molar ratio of Sn/In on the phase composition, particle size and conductivity were discussed. The results showed that the phase transformation occurs at a temperature of over 332 °C, and an ITO powder with perfect crystalline structure, minimum crystallite size, minimum powder resistance and the best conductivity can be prepared at the calcination temperature of 700 °C with 10% molar ratio of Sn/In.
Journal: Materials Chemistry and Physics - Volume 112, Issue 2, 1 December 2008, Pages 342–345