کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1526380 995370 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Semiconductivities of Sn-doped In2O3 powder prepared by co-precipitation through ion exchange method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Semiconductivities of Sn-doped In2O3 powder prepared by co-precipitation through ion exchange method
چکیده انگلیسی

Sn-doped In2O3 (ITO) powder was prepared by co-precipitation through ion exchange method with the solution of InCl3 and SnCl4·5H2O under the condition of the different temperatures and different molar ratios of Sn to In. ITO precursor was analyzed by TG-DTA, and the morphology, phase composition and particle size of the powder were characterized by TEM and XRD. The effects of calcination temperature and molar ratio of Sn/In on the phase composition, particle size and conductivity were discussed. The results showed that the phase transformation occurs at a temperature of over 332 °C, and an ITO powder with perfect crystalline structure, minimum crystallite size, minimum powder resistance and the best conductivity can be prepared at the calcination temperature of 700 °C with 10% molar ratio of Sn/In.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 112, Issue 2, 1 December 2008, Pages 342–345
نویسندگان
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