Sintering behavior, phase evolution and microwave dielectric properties of Bi{Sb1−x(Nb0.992V0.008)x}O4 ceramics

Bi{Sb1−x(Nb0.992V0.008)x}O4 compositions were designed with 0.05 ≤ x ≤ 0.4 and ceramics were prepared using solid state reaction method. All ceramics were well densified when sintering temperature was above 960 °C. Single monoclinic phase was obtained when x value was less than 0.2 and Bi{Sb0.6(Nb0.992V0.008)0.4}O4 ceramic was composed of both monoclinic phase and orthorhombic phase. As x value increased from 0.05 to 0.2, microwave dielectric constant of Bi{Sb1−x(Nb0.992V0.008)x}O4 ceramics increased from 22.1 to 31.4 while Qf value decreasing from 41000 GHz to 8000 GHz and TCF shifting from −54.4 ppm °C−1 to +8 ppm °C−1. Bi{Sb0.6(Nb0.992V0.008)0.4}O4 ceramic has also good microwave dielectric properties with dielectric constant about 34.7, Qf value about 16000 GHz and TCF about +16.1 ppm °C−1. This kind of ceramics might be a good candidate for LTCC application.