کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1526558 | 1511845 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of GeSeTl thin films deposited by e-beam evaporation technique
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Five compositions of Ge14Se86−xTlx (x = 20%, 22%, 23.5%, 26.8%, and 28%) are prepared using the melt-quenching technique. Thin films of thickness d = 15, 30, 60, 90, 120, and 180 nm were deposited using electron-beam evaporation technique. All the films showed a non-Ohmic behavior. At higher range of ambient temperature, the activation energy ΔEσ was studied as a function of the coordination number r, average number of constraints Ncos and heat of atomization Hs. Mott's parameters of the system Ge14Se86−xTlx were studied at lower range of temperature. The effect of annealing temperature Tann on the activation energy was taken in consideration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 116, Issues 2–3, 15 August 2009, Pages 353–357
Journal: Materials Chemistry and Physics - Volume 116, Issues 2–3, 15 August 2009, Pages 353–357
نویسندگان
M.M. Abd El-Raheem,