کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1526655 | 995373 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preferentially oriented ZnO thin films on basal plane sapphire substrates derived from polymeric precursors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Preferentially oriented zinc oxide (ZnO) thin films on basal plane sapphire have been deposited by spin coating polymeric precursors synthesized via Pechini process. The polymeric precursors were synthesized using citric acid as chelating agent and ethylene glycol as reaction medium. The effects of annealing (from 673Â K to 1273Â K) on surface morphology, crystallinity, and optical properties were examined. XRD results illustrate polycrystalline ZnO thin films with preferred orientation along (0Â 0Â 2) plane that increases with an increase in annealing temperature. The textured ZnO films were obtained on annealing for 10Â min at 1173Â K without the formation of interfacial spinels. Surface morphology of these films changed from spherical to highly faceted grains. Transmission spectra reveal that all films are >70% transparent except for the sample annealed at 1273Â K, which has 45% optical transparency in the visible region. Room temperature photoluminescence spectra revealed broad ultraviolet emission centered at 380Â nm without deep-level emission, suggesting high quality ZnO thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 112, Issue 3, 20 December 2008, Pages 916-922
Journal: Materials Chemistry and Physics - Volume 112, Issue 3, 20 December 2008, Pages 916-922
نویسندگان
Uma Choppali, Brian P. Gorman,