Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (VAH) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of VAH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that VAH depends on the doping density. The results are discussed.