کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1527038 1511853 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS
چکیده انگلیسی

Locally strained Si technology using embedded SiGe has been used to improve pMOSFET device performance through hole mobility enhancement. Embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si pMOSFET source and drain areas. Prior to selective SiGe epi growth, a thin layer of Si seed was employed to help nucleate following low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved device performance.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 107, Issues 2–3, 15 February 2008, Pages 471–475
نویسندگان
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