کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1527170 | 1511851 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of Ba1âxSrxWO4 and Ba1âxCaxWO4 films on tungsten plate by mechanically assisted solution reaction at room temperature
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of Ba1âxSrxWO4 and Ba1âxCaxWO4 films on tungsten plate by mechanically assisted solution reaction at room temperature Preparation of Ba1âxSrxWO4 and Ba1âxCaxWO4 films on tungsten plate by mechanically assisted solution reaction at room temperature](/preview/png/1527170.png)
چکیده انگلیسی
Preparation of the alkaline earth tungstate films such as Ba1âxSrxWO4 and Ba1âxCaxWO4 on the tungsten substrate was studied with a simple solution process assisted with the ball rotation at room temperature. The solid solution formation and limitations, the effect of oxidizing agent H2O2 and alkaline earth ions concentration on the dissolution of W substrate and the growth of Ba1âxSrxWO4 and Ba1âxCaxWO4 films were studied in detail. The ball rotation assistance plays a very important role to enhance the dissolution of the W substrate and mass transport of the reactant species such as alkaline earth ions and WO42â ions onto the solid/solution interface region, where precipitation occurs. Therefore, the rate of film formation was accelerated by the ball rotation assistance to the reaction system. Ba-rich Ba1âxSrxWO4 and Ba1âxCaxWO4 films were formed without high energy or high temperature treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 109, Issues 2â3, 15 June 2008, Pages 217-223
Journal: Materials Chemistry and Physics - Volume 109, Issues 2â3, 15 June 2008, Pages 217-223
نویسندگان
Dinesh Rangappa, Takeshi Fujiwara, Tomoaki Watanabe, Masahiro Yoshimura,