Preparation of Cu2O films on MgO (1 1 0) substrate by means of halide chemical vapor deposition under atmospheric pressure

High-quality Cu2O thin films were grown epitaxially on MgO (1 1 0) substrate by halide chemical vapor deposition under atmospheric pressure (AP-HCVD). The full width at half maximum of X-ray diffraction ω rocking measurement of the (2 2 0) plane was 0.1429° and that the of the (1 −1 0) plane was 0.303°.This result showed that the Cu2O films have a high degree of out-of-plane and in-plane crystallinity. Pole-figure and reciprocal space mapping (RSM) of Cu2O films showed Cu2O film is grown without strain. Optical band gap energy of Cu2O film calculated from absorption spectra showed 2.38 eV. These results indicated that AP-HCVD was promising growth method for high-quality Cu2O film.