کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1527480 | 995389 | 2008 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Physical properties of AgIn5S8 polycrystalline films fabricated by solution growth technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Polycrystalline ternary AgIn5S8 films were deposited on indium-tin-oxide coated glass substrates by using chemical bath deposition. New procedures for the growth of films are presented. The solutions containing silver nitrate, indium nitrate, triethanolamine, ammonium nitrate, and thioacetamide under acidic conditions were used for the deposition of AgIn5S8 polycrystalline films. The influences of various deposition parameters on structural, optical, and electrical properties of films have been investigated. The X-ray diffraction patterns show cubic AgIn5S8 is the major crystalline phase. With different substrates, the different crystalline phases were observed. The band gaps and carrier densities of these samples determined from transmittance spectra, electrochemical and Hall measurements are in the range of 1.73-1.85Â eV and 4.35Â ÃÂ 1014 to 6.53Â ÃÂ 1014Â cmâ3, respectively. The flat band potentials of these samples are located between â0.31 and â0.41Â V versus normal hydrogen electrode by using the Mott-Schottky measurements. All samples indicated n-type conductivities by electrochemical and Hall measurements. The maximum photocurrent density of samples prepared in this study was found to be 4.5Â mAÂ cmâ2 under the illumination using a 300 Xe lamp system with the light intensity kept at 100Â mWÂ cmâ2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 108, Issue 1, 15 March 2008, Pages 16-23
Journal: Materials Chemistry and Physics - Volume 108, Issue 1, 15 March 2008, Pages 16-23
نویسندگان
Kong-Wei Cheng, Chao-Ming Huang, Guan-Ting Pan, Pei-Chun Chen, Tai-Chou Lee, Thomas C.K. Yang,