Chemical bond approach to glass transition temperature and crystallization activation energy in Se90In10−xSnx (2 ≤ x ≤ 8) semiconducting glasses

Ternary chalcogenide glasses Se90In10−xSnx (2 ≤ x ≤ 8 at.%) have been prepared by melt quenching technique. Differential scanning calorimeter (DSC) has been used to determine the glass transition temperature Tg, onset Tc and peak Tp temperatures of crystallization. The variation of both Tc and Tp with the heating rate has been utilized to calculate the activation energy of crystallization Ec, under non-isothermal condition, using Kissinger, Ozawa, Augis and Bennet and Takhor models. Results reveal that both Tg and Ec decrease with the addition of Sn up to 6 at.% with sharp increase in both values at 8 at.% and the crystal growth occurs in one-dimension. The overall mean bond energy 〈E〉 is found to decrease with Sn concentration and the correlation of both Tg and Ec with 〈E〉 is linear up to 6 at.% of Sn where as at 8 at.%, deviation from linearity is observed and an empirical relation of the form Tg (or Ec)=∑i=03Ci〈E〉i has been suggested to describe such behavior. The obtained crosslinking parameter Prich and R-values reveal the occurrence of chemically stable composition at higher percentages of Sn.