Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O3 thin films obtained from the soft chemical method

Ba(Zr0.25Ti0.75)O3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 °C for 4 h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz.