کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1527993 995399 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst
چکیده انگلیسی

Using CH3SiCl3 (MTS) and H2 as the precursors, large quantities of SiC nanowires with homogeneous diameter have been fabricated by a simple chemical vapor deposition process without using a metallic catalyst. The as-grown SiC nanowires were identified by TEM and XRD as single crystal β-SiC structure, with diameters of about 70 nm. As the increasing of deposition temperature, or as the decreasing of H2/MTS mol ratio, the SiC crystal dimensions increase and the morphologies of the as-grown SiC crystal change from nanowires to grains. β-SiC coaxial nanocables with a amorphous wrapping layer have also been obtained by the oxidation of SiC nanowires.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 100, Issue 1, 10 November 2006, Pages 108–111
نویسندگان
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