کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1528109 995402 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and morphology of one-dimensional SiC nanostructures without catalyst assistant
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Growth and morphology of one-dimensional SiC nanostructures without catalyst assistant
چکیده انگلیسی

Silicon carbide (SiC) nanowires and a new kind of SiC nanostructure, necklace-like nanowires, had been synthesized by using SiO2 and graphite powder as the raw materials, during which the course of a simple chemical vapor deposition (CVD) technique without any catalyst was applied. The products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as-received SiC nanowires have diameters in the range of 50–100 nm and lengths up to several tens of micrometers. The growth of these one-dimensional nanostructures is considered to involve a vapor–solid process and the possible growth mechanism of SiC nanowires is proposed. It is thought that the necklace-like SiC nanowires is formed by a two-step process.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 95, Issue 1, 10 January 2006, Pages 140–144
نویسندگان
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