کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1528109 | 995402 | 2006 | 5 صفحه PDF | دانلود رایگان |
Silicon carbide (SiC) nanowires and a new kind of SiC nanostructure, necklace-like nanowires, had been synthesized by using SiO2 and graphite powder as the raw materials, during which the course of a simple chemical vapor deposition (CVD) technique without any catalyst was applied. The products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as-received SiC nanowires have diameters in the range of 50–100 nm and lengths up to several tens of micrometers. The growth of these one-dimensional nanostructures is considered to involve a vapor–solid process and the possible growth mechanism of SiC nanowires is proposed. It is thought that the necklace-like SiC nanowires is formed by a two-step process.
Journal: Materials Chemistry and Physics - Volume 95, Issue 1, 10 January 2006, Pages 140–144