کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1528252 | 1511861 | 2006 | 4 صفحه PDF | دانلود رایگان |
In this paper, we reported the InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface which caused by KrF excimer laser-irradiation. Comparing with the conventional LED, the brightness of InGaN/GaN light emitting diode (LED) was raised by a factor of 1.25 at 20 mA after KrF excimer laser-irradiation (250 mJ cm−2 at 248 nm for 25 ns). Meanwhile, the operation voltage of InGaN/GaN LED was reduced from 3.55 to 3.3 V at 20 mA with 29% reduction in the series resistance. The causes for the brightness increase can be attributed to laser-irradiation induced nano-roughening of p-GaN surface. The reduction in the series resistance can be attributed to the increased contact area of nano-roughened surface and higher hole concentration after laser-irradiation.
Journal: Materials Chemistry and Physics - Volume 99, Issues 2–3, 10 October 2006, Pages 414–417