کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1528758 | 1511983 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and Raman properties of compositionally tunable AlxGa1âxN (0.66 â¤Â x â¤Â 1) nanowires
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In this work, we describe compositionally tunable AlxGa1âxN nanowires (0.66 â¤Â x â¤Â 1) grown on Si (1 0 0) substrates using a chemical vapor deposition (CVD) process. The composition of AlxGa1âxN nanowires may be tuned by adjusting the vapor temperature of the AlCl3 and GaCl3 used in its production. The structural, chemical and optical properties of the AlxGa1âxN nanowires are investigated using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM), X-ray energy-dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and Raman spectroscopy. All the AlxGa1âxN nanowires exhibit a preferred c-axis orientation. Raman analysis shows that the E22 phonon exhibits two-mode behavior. The positions of the AlN-like E22, GaN-like E22 and A1(TO) modes shift toward higher frequencies as the amount of Al increases. The growth of these AlxGa1âxN nanowires has been proposed to follow a vapor-solid-solid (VSS) mechanism.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 183, April 2014, Pages 24-28
Journal: Materials Science and Engineering: B - Volume 183, April 2014, Pages 24-28
نویسندگان
Fei Chen, Xiaohong Ji, Zhenya Lu, Yanhua Shen, Qinyuan Zhang,