Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

Structures and morphologies of the Cu2O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu2O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu2O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively.

► Bottom-up self-assembly Cu2O/ZnO heterojunction was fabricated by electrochemical deposition on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET).
► The dielectric response of Cu2O/ZnO heterojunction thin films had been investigated.
► The universal dielectric response was used to investigate the hopping behavior in Cu2O/ZnO heterojunction.