Analysis of the device characteristics of AlGaN/GaN HEMTs over a wide temperature range

In this study, we investigate the behavior of the current–voltage (I–V) characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K. Temperature dependent device characteristics and the current transport mechanism are reported. It is observed that the Schottky barrier height Φ increases and the ideality factor n decreases with temperature. There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height inhomogeneities of AlGaN/GaN HEMT. The estimated values of the series resistances (Rs) are in the range of 144.2 Ω at 223 K to 74.3 Ω at 398 K. The Φ, n, Rs, Gm and Schottky leakage current values are seen to be strongly temperature dependent.

► We report the behavior of the current–voltage characteristics of AlGaN/GaN HEMT in the temperature range of 223–398 K.
► The origin of the leakage current and the current transport behaviors are reported.
► There is a linear relationship between the barrier height and the ideality factor, which is attributed to barrier height in homogeneities.