Low-temperature vapor synthesis of 1D β-Ga2O3 nanostructures on Si substrate by inert salt-assisted route

► Inert salt-assisted route has been extended to synthesize β-Ga2O3 nanostructures. ► β-Ga2O3 nanowires and nanobelts covered bare Si substrate. ► The depositing temperature was lower down to 650 °C. ► Low temperature growth was attributed to the well dispersion of Ga over inert salt. ► The synthesized products have a stable and broad green emission band.